SK Hynix announced on August 9, 2023, that it has become the first company in the industry to develop NAND flash memory with more than 300 layers through the release of a 321-layer 4D NAND sample. The company stated that it will further improve the 321-layer NAND flash and plans to begin mass production in the first half of 2025. At the 2023 Flash Memory Summit, SK Hynix showcased its latest development, the 321-layer 1Tb TLC 4D NAND Flash sample, and shared its progress in development. They stated that they will continue to meet the demands of the AI era and lead innovation. By launching high-performance, high-capacity NAND, they will strive to address the challenges.
Choi Jungdal, the head of NAND development at SK Hynix, stated in his keynote speech at the conference, "We will continue to meet the needs of the AI era and lead innovation. By introducing high-performance, high-capacity NAND, we will strive to respond to the challenges." He also pointed out that the technological competitiveness accumulated from the successful large-scale production of the world's highest 238-layer NAND provides strong support for the development of the 321-layer product. "By addressing stacking limitations, SK Hynix will enter the era of NAND with more than 300 layers and lead the market."
It is revealed that the efficiency of the 321-layer 1Tb TLC NAND is 59% higher than the previous generation 238-layer 512Gb, as the data storage units can be stacked in larger quantities, achieving greater storage capacity and increasing the output of chips per wafer on the same chip.
At the ISSCC 2023 conference earlier this year, SK Hynix disclosed their breakthroughs in 3D NAND flash development through a paper titled "High-Density Memory and High-Speed Interface." They demonstrated a prototype of 3D NAND flash stacked with more than 300 layers. The paper, authored by 35 SK Hynix engineers, stated, "The most important themes in the NAND flash field are continuous performance improvement and cost reduction per bit. To reduce the cost per bit, it is necessary to increase the number of stacking layers while reducing the spacing between stack layers. It is necessary to manage the increasing wordline (WL) resistance caused by the reduction in stacking spacing."
At the ISSCC 2023 conference, SK Hynix showcased their active exploration of increasing stacking layers to improve the performance and capacity of NAND flash memory. Their research findings provide new ideas and methods for further optimizing NAND flash memory technology.
With the rapid development of artificial intelligence applications, there is a growing demand for higher capacity and higher performance storage chips. SK Hynix's groundbreaking progress will provide strong support for meeting this demand and play an important role in driving the development of NAND flash memory technology.
SK Hynix presented their latest research findings at the ISSCC 2023 conference, which is the 8th generation 3D NAND flash memory. This chip, with a capacity of 1Tb (128GB), employs triple-level cell (TLC) and achieves a bit density of over 20Gb/mm^2, offering a new solution for high-density storage.
The chip has a page capacity of 16KB and features four planes, with an interface transfer rate of 2400MT/s and a maximum throughput of 194MB/s (18% higher than the 7th generation 238-layer 3D NAND flash memory). This breakthrough will bring better performance and higher storage capacity to end consumers.
By increasing stacking layers and reducing interlayer spacing, SK Hynix has successfully lowered the cost per bit and improved the performance of NAND flash memory. With the continuous development of artificial intelligence applications, the demand for higher capacity and higher performance storage chips is growing. SK Hynix's breakthrough progress will meet this demand and make significant contributions to the development of NAND flash memory technology.
Furthermore, the increase in density will also lower the cost per TB during the manufacturing process. This means that end consumers will benefit from both performance and capacity improvements. SK Hynix will continue to focus on developing innovative storage technologies to meet the growing data storage demands and maintain a leading position in the competitive market.
At FMS 2023, SK Hynix showcased the next-generation NAND product solutions optimized for market demand. These solutions include enterprise solid-state drives (eSSDs) with PCIe 5 (Gen5) interfaces and UFS 4.0. In addition to showcasing the latest storage technologies, SK Hynix also stated that they will continue to develop next-generation PCI 6.0 and UFS 5.0 products. The company will leverage its accumulated product technology and continuously optimized internal solutions to maintain a market-leading position.
By introducing high-performance solid-state drives and storage solutions suitable for enterprise applications, SK Hynix will provide more reliable and efficient storage solutions for data centers, cloud computing, and enterprise-level applications. These innovative products will further drive the development of the data storage industry and meet the growing demand for data storage.
SK Hynix will continue to invest in research and development and innovation, constantly launching storage products with advanced technology and high performance to meet the needs of different fields and applications. Their efforts will bring new breakthroughs and developments to the data storage industry.